PART |
Description |
Maker |
M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位(2097,152 - Word 1048,576字BY16位)的CMOS 3.3只,块擦除闪
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Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M29GB |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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Mitsubishi Electric Corporation
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MSM534001E |
524,288-Word x 8-Bit MASKROM 524288-Word x 8-Bit MASKROM From old datasheet system
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OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
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M5M5T5636UG |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
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Renesas Electronics Corporation
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M5M5V4R08J-15 M5M5V4R08J-20 M5M5V4R08J-12 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5W816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5W816WG-70HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5Y816WG-70HI M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M540 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5 |
From old datasheet system 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5V408BTP-70HI M5M5V408BTP-85H M5M5V408BTP-85HI |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM Memory>Low Power SRAM
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Renesas Electronics Corporation
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GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
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ETC[ETC] N.A.
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